Document
AP85T08GS/P
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
80V 13mΩ 75A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T08GP) are available for low-profile applications. G D G D S
TO-263(S)
TO-220(P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 80 ±20 75 48 260 138 1.11
3
Units V V A A A W W/℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
450 30 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
200912072-1/4
AP85T08GS/P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C)
o o
o
Test Conditions VGS=0V, ID=1mA
2
Min. 80 1 Min. -
Typ. 70 63 23 38 30 100 144 173 6300 670 350 1.1 Typ. 47 86
Max. 13 3 10 100 ±100 100 10080 1.7 Max. 1.3 -
Units V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Units V ns nC
VGS=10V, ID=45A VDS=VGS, ID=250uA VDS=10V, ID=45A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= ±20V ID=45A VDS=64V VGS=4.5V VDS=40V ID=45A RG=10Ω,VGS=10V RD=0.89Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage
2 2 2
Source-Drain Diode
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP85T08GS/P
250 120
T C = 25 o C
200
10V 7.0 V ID , Drain Current (A)
90
T C = 150 C
o
ID , Drain Current (A)
10V 7.0 V 5.0V 4.5V
150
60
5.0V
100
4.5V
50
30
V G =3.0V V G =3.0V
0 0 3 6 9 12
0
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I D =20A T C =25 C
13 1.6
o
I D =45A V G =10V Normalized RDS(ON)
RDS(ON) (mΩ)
12
1.2
11
0.8
10 2 4 6 8 10
0.4 -50 0 50 100 150
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
50
40 1.5
IS(A)
30
Normalized VGS(th) (V)
1.4
T j =150 o C
20
1.0
T j =25 o C
0.5 10
0 0 0.2 0.4 0.6 0.8 1 1.2
0.0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP85T08GS/P
f=1.0MHz
12 10000
I D = 45 A
10
C iss
VGS , Gate to Source Voltage (V)
8
V DS = 4 0 V V DS = 50 V V DS = 64 V C (pF)
1000
6
C oss C rss
4
2
0
0 20 40 60 80 100
100 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
0.2
ID (A)
100us 1ms
10
0.1
0.1
0.05
0.02 0.01
PDM
t T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
T c =25 C Single Pulse
1
o
10ms 100ms DC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V T j =25 o C
80
VG
T j =150 o C
ID , Drain Current (A)
QG 4.5V QGS QGD
40
Charge
0 0 2 4 6 8
Q
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge.