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AP85T08GP Dataheets PDF



Part Number AP85T08GP
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-Channel MOSFET
Datasheet AP85T08GP DatasheetAP85T08GP Datasheet (PDF)

AP85T08GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 13mΩ 75A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount .

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AP85T08GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 13mΩ 75A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T08GP) are available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 80 ±20 75 48 260 138 1.11 3 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200912072-1/4 AP85T08GS/P Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o o Test Conditions VGS=0V, ID=1mA 2 Min. 80 1 Min. - Typ. 70 63 23 38 30 100 144 173 6300 670 350 1.1 Typ. 47 86 Max. 13 3 10 100 ±100 100 10080 1.7 Max. 1.3 - Units V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Units V ns nC VGS=10V, ID=45A VDS=VGS, ID=250uA VDS=10V, ID=45A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= ±20V ID=45A VDS=64V VGS=4.5V VDS=40V ID=45A RG=10Ω,VGS=10V RD=0.89Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage 2 2 2 Source-Drain Diode Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP85T08GS/P 250 120 T C = 25 o C 200 10V 7.0 V ID , Drain Current (A) 90 T C = 150 C o ID , Drain Current (A) 10V 7.0 V 5.0V 4.5V 150 60 5.0V 100 4.5V 50 30 V G =3.0V V G =3.0V 0 0 3 6 9 12 0 0 3 6 9 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 14 2.0 I D =20A T C =25 C 13 1.6 o I D =45A V G =10V Normalized RDS(ON) RDS(ON) (mΩ) 12 1.2 11 0.8 10 2 4 6 8 10 0.4 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 50 40 1.5 IS(A) 30 Normalized VGS(th) (V) 1.4 T j =150 o C 20 1.0 T j =25 o C 0.5 10 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP85T08GS/P f=1.0MHz 12 10000 I D = 45 A 10 C iss VGS , Gate to Source Voltage (V) 8 V DS = 4 0 V V DS = 50 V V DS = 64 V C (pF) 1000 6 C oss C rss 4 2 0 0 20 40 60 80 100 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 ID (A) 100us 1ms 10 0.1 0.1 0.05 0.02 0.01 PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 C Single Pulse 1 o 10ms 100ms DC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 V DS =5V T j =25 o C 80 VG T j =150 o C ID , Drain Current (A) QG 4.5V QGS QGD 40 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge.


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