BARRIER DIODE. YG835C04R Datasheet

YG835C04R Datasheet PDF, Equivalent


Part Number

YG835C04R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
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YG835C04R Datasheet
YG835C04R
SCHOTTKY BARRIER DIODE
(40V / 22A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
123
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
40 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=95°C
Square wave
Sine wave 10ms
40
1500
22*
120
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=6.0A
0.45 V
Reverse current **
IR VR=VRRM
15.0
mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG835C04R Datasheet
(40V / 22A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150 oC
1 Tj=125 oC
Tj=100 oC
Tj=25 oC
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
Forward Power Dissipation
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Io
λ
360°
Square wave λ=60 o
Square wave λ=120 o
Sine wave λ=180 o
Square wave λ=180 o
DC
Per 1element
1 2 3 4 5 6 7 8 9 10 11 12
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130
120 DC
110
100 Sine wave λ=180 o
90 Square wave λ=180 o
80
70 360°
λ
60 Io
50 VR=30V
40
Square wave λ=120 o
Square wave λ=60 o
30
20
0
5 10 15 20 25 30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
35
YG835C04R
103
102
101
100
10-1
10-2
10-3
0
Reverse Characteristic (typ.)
Tj=150 oC
Tj=125 oC
Tj=100 oC
Tj= 25 oC
10 20 30 40
VR Reverse Voltage (V)
50
Reverse Power Dissipation
16
15 360°
14
13 VR
DC
12
α
11
10
9
8 α =180 o
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
10000
1000
100
10
1
10 100
VR Reverse Voltage (V)


Features Datasheet pdf YG835C04R SCHOTTKY BARRIER DIODE (40V / 22A TO-22OF15) Outline Drawings 10±0. 5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6. 3 2.7±0.2 1 2 3 3.7±0.2 1.2±0. 2 13Min Features Low VF Super high spe ed switching. High reliability by plane r design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC -67 Applications High speed power swit ching. Connection Diagram 2 1 3 Maxim um Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak r everse voltage Repetitive peak surge re verse voltage Isolating voltage Average output current Suege current Operating junction temperature Storage temperatu re Symbol VRRM VRSM Viso IO IFSM Tj Tst g tw=500ns, duty=1/40 Terminals to Case , AC. 1min. duty=1/2, Tc=95°C Square w ave Sine wave 10ms Conditions Rating 4 0 40 1500 22* 120 +150 -40 to +150 Uni t V V V A A °C °C * Out put current of centertap full wave connection. Elec trical Characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop ** Reverse current ** Thermal.
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