N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2330GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Ga...
Description
Advanced Power Electronics Corp.
AP2330GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Surface Mount Device RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
90V 240mΩ 1.7A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2330GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as voltage conversion or switch applications.
D
S SOT-23 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 90 ± 20 1.7 1.3 6 1.38 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W
Ordering Information
AP2330GN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
200912082-3
1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) ...
Similar Datasheet