AP75T10BGP-HF-3

Advanced Power Electronics Corp. AP75T10BGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 100V 12mΩ 75A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D (tab) G D S TO-220 (P) The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required. Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 100 ±20 75 47 300 138 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.9 62 Unit °C/W °C/W Ordering Information AP75T10BGP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 200910191-3 1/5 Advanced Power Electronics Corp. AP75T10BGP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss ...