Document
AP75T10GS/P
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
100V 15mΩ 72A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10GP) are available for low-profile applications. G D G D S
TO-263(S)
TO-220(P)
S Units V V A A A W W/℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 100 ±20 72 45 260 138 1.11 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W
AP75T10GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
2
Min. 100 1 Min. -
Typ. 0.09 52 69 12 39 12 75 220 250 540 310 1.1 Typ. 51 74
Max. Units 15 21 3 10 100 ±100 110.4 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=30A VGS=4.5V, ID=16A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=100V, VGS=0V VDS=80V ,VGS=0V VGS= ±20V ID=30A VDS=80V VGS=4.5V VDS=50V ID=30A RG=10Ω,VGS=10V RD=1.6Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=30A, VGS=0V IS=30A, VGS=0V dI/dt=100A/µs
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage
2 2 2
5690 9100
Source-Drain Diode
Max. Units 1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP75T10GS/P
250 120
T C = 25 C
200
o
ID , Drain Current (A)
ID , Drain Current (A)
10V 6.0 V 5.0V 4.5V
100
T C = 150 o C
80
10V 6.0V 5.0V 4.5V V G =3.0V
150
60
100
V G =3.0V
50
40
20
0 0 2 4 6 8
0
0
1
2
3
4
5
6
7
8
9
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage .