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AP75T10GP Dataheets PDF



Part Number AP75T10GP
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP75T10GP DatasheetAP75T10GP Datasheet (PDF)

AP75T10GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 15mΩ 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface moun.

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AP75T10GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 15mΩ 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10GP) are available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Units V V A A A W W/℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 ±20 72 45 260 138 1.11 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W AP75T10GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 100 1 Min. - Typ. 0.09 52 69 12 39 12 75 220 250 540 310 1.1 Typ. 51 74 Max. Units 15 21 3 10 100 ±100 110.4 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A VGS=4.5V, ID=16A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=100V, VGS=0V VDS=80V ,VGS=0V VGS= ±20V ID=30A VDS=80V VGS=4.5V VDS=50V ID=30A RG=10Ω,VGS=10V RD=1.6Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=30A, VGS=0V IS=30A, VGS=0V dI/dt=100A/µs Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage 2 2 2 5690 9100 Source-Drain Diode Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP75T10GS/P 250 120 T C = 25 C 200 o ID , Drain Current (A) ID , Drain Current (A) 10V 6.0 V 5.0V 4.5V 100 T C = 150 o C 80 10V 6.0V 5.0V 4.5V V G =3.0V 150 60 100 V G =3.0V 50 40 20 0 0 2 4 6 8 0 0 1 2 3 4 5 6 7 8 9 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage .


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