DatasheetsPDF.com

AP75T10GS-3 Dataheets PDF



Part Number AP75T10GS-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP75T10GS-3 DatasheetAP75T10GS-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP75T10GP/S-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant G S D BV DSS RDS(ON) ID 100V 15mΩ 65A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP75T10GS-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well.

  AP75T10GS-3   AP75T10GS-3


Document
Advanced Power Electronics Corp. AP75T10GP/S-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant G S D BV DSS RDS(ON) ID 100V 15mΩ 65A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP75T10GS-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP75T10GP-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. G G D S TO-263 (S) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 D TO-220 (P) S Rating 100 +20 65 41 260 138 1.11 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.9 62 Unit °C/W °C/W Ordering Information AP75T10GS-3TR AP75T10GP-3TB RoHS-compliant TO-263, shipped on tape and reel (800 pcs/reel) RoHS-compliant TO-220, shipped in tubes ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 200806053-3 1/6 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID= 1mA 2 AP75T10GP/S-3 Min. 100 1 - Typ. 0.09 Max. Units - V V/°C ∆ BV DSS /∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25 ° C , ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=30A VGS= 4.5V, ID= 16A 52 12 39 12 75 220 250 5690 540 310 1.1 15 21 3 10 100 +100 9100 - mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=100V, VGS=0V VDS=80V ,VGS=0V VGS=+20V ID=30A VDS=80V VGS=4.5V VDS=50V ID=30A RG=10Ω , VGS= 10V RD= 1.6Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 69 110.4 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS= 30A, VGS=0V IS=30A, VGS=0V dI/dt=100A/µs Min. - Typ. 51 74 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. Typical Electrical Characteristics 250 120 AP75T10GP/S-3 T C = 25 C 200 o ID , Drain Current (A) ID , Drain Current (A) 10V 6.0 V 5.0V 4.5V o T C = 150 C 100 80 10V 6.0V 5.0V 4.5V V G =3.0V 150 60 V G =3.0V 100 40 50 20 0 0 2 4 6 8 0 0 1 2 3 4 5 6 7 8 9 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 17 Fig 2. Typical Output Characteristics 2.0 I D =16A 16 1.8 T C =25 o C Normalized RDS(ON) 1.6 I D =30A V G =10V RDS(ON) (mΩ) 15 1.4 14 1.2 1.0 13 0.8 12 0.6 11 2 4 6 8 10 0.4 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage 2 Fig 4. Normalized On-Resistance vs. Junction Temperature 45 Normalized VGS(th) (V) 1.5 30 IS(A) T j =150 o C 15 1 T j =25 o C 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/6 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) AP75T10GP/S-3 f=1.0MHz 12 10000 I D = 30 A 10 C iss VGS , Gate to Source Voltage (V) 8 V DS = 50 V V DS = 6.


AP75T10GP-3 AP75T10GS-3 AP75T10GP-HF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)