Document
Advanced Power Electronics Corp.
AP75T10GP/S-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant G S D
BV DSS RDS(ON) ID
100V 15mΩ 65A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP75T10GS-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP75T10GP-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.
G G D S
TO-263 (S)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
D
TO-220 (P)
S
Rating 100 +20 65 41 260 138 1.11 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.9 62 Unit °C/W °C/W
Ordering Information
AP75T10GS-3TR AP75T10GP-3TB RoHS-compliant TO-263, shipped on tape and reel (800 pcs/reel) RoHS-compliant TO-220, shipped in tubes
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200806053-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID= 1mA
2
AP75T10GP/S-3
Min. 100 1 -
Typ. 0.09
Max. Units -
V
V/°C
∆ BV DSS /∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25 ° C , ID=1mA
Static Drain-Source On-Resistance
VGS=10V, ID=30A VGS= 4.5V, ID= 16A
52 12 39 12 75 220 250 5690 540 310 1.1
15 21 3 10 100 +100 9100 -
mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150 C)
o
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=100V, VGS=0V VDS=80V ,VGS=0V VGS=+20V ID=30A VDS=80V VGS=4.5V VDS=50V ID=30A RG=10Ω , VGS= 10V RD= 1.6Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
69 110.4
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS= 30A, VGS=0V IS=30A, VGS=0V dI/dt=100A/µs
Min. -
Typ. 51 74
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
250 120
AP75T10GP/S-3
T C = 25 C
200
o
ID , Drain Current (A)
ID , Drain Current (A)
10V 6.0 V 5.0V 4.5V
o T C = 150 C
100
80
10V 6.0V 5.0V 4.5V V G =3.0V
150
60
V G =3.0V
100
40
50 20
0 0 2 4 6 8
0
0
1
2
3
4
5
6
7
8
9
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
17
Fig 2. Typical Output Characteristics
2.0
I D =16A
16
1.8
T C =25 o C Normalized RDS(ON)
1.6
I D =30A V G =10V
RDS(ON) (mΩ)
15
1.4
14
1.2
1.0
13
0.8
12
0.6
11 2 4 6 8 10
0.4 -50 0 50 100 150
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
2
Fig 4. Normalized On-Resistance vs. Junction Temperature
45
Normalized VGS(th) (V)
1.5
30
IS(A)
T j =150 o C
15
1
T j =25 o C
0.5
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
AP75T10GP/S-3
f=1.0MHz
12
10000
I D = 30 A
10
C iss
VGS , Gate to Source Voltage (V)
8
V DS = 50 V V DS = 6.