DatasheetsPDF.com

ESAC87M-009R

Fuji Electric

SCHOTTKY BARRIER DIODE

ESAC87M-009R (16A) SCHOTTKY BARRIER DIODE 15.5 ±0.3 (90V / 16A ) Outline drawings, mm 5.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9.3...


Fuji Electric

ESAC87M-009R

File Download Download ESAC87M-009R Datasheet


Description
ESAC87M-009R (16A) SCHOTTKY BARRIER DIODE 15.5 ±0.3 (90V / 16A ) Outline drawings, mm 5.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9.3 ±0.3 3.2 +0.3 2.3 ±0.2 2.1±0.3 1.6 ±0.3 1.1 —0.1 +0.2 20 Min 21.5 ±0.3 5.45 ±0.2 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2. Drain 3. Source Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM V iso Io IFSM Tj Tstg tw=500ns, duty=1/40 Terminals-to-case, AC. 1min. Conditions Rating 90 100 1500 16* 100 -40 to +150 -40 to +150 Unit V V V A A °C °C Square wave, duty=1/2 Tc=115°C Sine wave 10ms * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=6A VR=VRRM Junction to case Max. 0.9 10 2.0 Unit V mA °C/W (90V / 16A ) Characteristics Forward Characteristic (typ.) 100 10 3 ESAC87M-009R (16A) Reverse Characteristic (typ.) Tj=150 C 10 2 o Tj=125 C o (mA) 10 10 1 Tj=100 C o (A) Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1 o o o o Reverse Current Forward Current 10 0 10 -1 Tj= 25 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)