DatasheetsPDF.com

AP9997GK-HF-3 Dataheets PDF



Part Number AP9997GK-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9997GK-HF-3 DatasheetAP9997GK-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP9997GK-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, Halogen-free D BV DSS R DS(ON) G S 100V 120mΩ 3.2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9997GK-HF-3 is in the popular SOT-223 small surface-mount package which is widely used in commercial and .

  AP9997GK-HF-3   AP9997GK-HF-3


Document
Advanced Power Electronics Corp. AP9997GK-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, Halogen-free D BV DSS R DS(ON) G S 100V 120mΩ 3.2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9997GK-HF-3 is in the popular SOT-223 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. (tab) D S D G SOT-223 (K) Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 100 + 20 3.2 2.6 20 2.8 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 45 Unit °C/W Ordering Information AP9997GK-HF-3TR RoHS-compliant halogen-free SOT-223, shipped on tape and reel, 3000pcs/ reel ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201006153-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 AP9997GK-HF-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.5V, ID=2A Min. 100 1 - Typ. 3 14 1.5 5.5 4.5 7 18 6 450 65 50 Max. Units 120 200 3 25 100 ±100 22 720 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VDS=80V ,VGS=0V VGS=±20V, VDS=0V ID=3A VDS=80V VGS=10V VDS=50V ID=1A RG=3.3Ω ,VGS=10V RD=50Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.5A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 39 62 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300µs , duty cycle < 2% 2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 120°C/W when mounted on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. Typical Electrical Characteristics 20 20 AP9997GK-HF-3 T A =150 o C 16 T A =25 o C 16 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 10V 7.0V 5.0V 4.5V 12 12 8 8 4 V G =3.0V 4 V G =3.0V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 140 2.4 Fig 2. Typical Output Characteristics ID=2A 130 o T A =25 C 2.0 ID=3A V G =10V RDS(ON) (mΩ ) 120 Normalized RDS(ON) 2 4 6 8 10 1.6 110 1.2 100 0.8 90 80 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. 10 On-Resistance vs. Gate Voltage 1.8 Fig 4. Normalized On-Resistance vs. Junction Temperature 1.6 8 1.4 6 IS (A) T j =150 C o T j =25 C o VGS(th) (V) 1.2 4 1 2 0.8 0 0 0.4 0.8 1.2 0.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/5 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) AP9997GK-HF-3 f=1.0MHz 12 10000 10 VGS , Gate to Source Voltage (V) I D =3A V DS =80V 8 1000 C (pF) 6 C iss 4 100 C oss C rss 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics 100 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) Duty factor=0.


GP2Y0A21YK0F AP9997GK-HF-3 LD7850


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)