AP9997GK-HF

AP9997GK-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product SOT-223 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S D G 100V 120mΩ 3.2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 100 +20 3.2 2.6 20 2.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 45 Unit ℃/W Data and specifications subject to change without notice 1 201006153 AP9997GK-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.5V, ID=2A Min. 100 1 - Typ. 3 14 1.5 5.5 4.5 7 18 6 450 65 50 Max. Units 120 200 3 25 100 +100 22 720 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS ...