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AP9997GP-HF-3

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9997GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Ga...


Advanced Power Electronics

AP9997GP-HF-3

File Download Download AP9997GP-HF-3 Datasheet


Description
Advanced Power Electronics Corp. AP9997GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 100V 120mΩ 11A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9997GP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives. The TO-220 through-hole package is often used where a small PCB footprint or an attached heatsink is required. G D TO-220 (P) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 100 ±20 11 7 30 34.7 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 62 Units °C/W °C/W Ordering Information AP9997GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200812242-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C...




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