N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9997GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Ga...
Description
Advanced Power Electronics Corp.
AP9997GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
100V 120mΩ 11A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9997GP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives. The TO-220 through-hole package is often used where a small PCB footprint or an attached heatsink is required.
G
D
TO-220 (P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 100 ±20 11 7 30 34.7 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 62 Units °C/W °C/W
Ordering Information
AP9997GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes
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200812242-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C...
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