N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP18T10GP
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast...
Description
AP18T10GP
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 160mΩ 9A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 100 +20 9 5.6 30 28 2 -55 to 150 -55 to 150
Units V V A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 4.5 62 Units ℃/W ℃/W 1 201008121
Data and specifications subject to change without notice
AP18T10GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forw...
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