AP9997AGH-HF-3

Advanced Power Electronics Corp. AP9997AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 120V 185mΩ 8.8A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP9997AGH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 120 + 20 8.8 5.6 30 34.7 0.28 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value Unit 3 .6 62.5 110 °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP9997AGH-HF-3TR RoHS-compliant, halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200911063-3 1/5 Advanced Power Electronics Corp. AP9997AGH-HF-3 Electrical S...