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AP03N40AP-HF-3 Dataheets PDF



Part Number AP03N40AP-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP03N40AP-HF-3 DatasheetAP03N40AP-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP03N40AP-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 400V 2.6Ω 2.7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP03N40AP-HF-3 is in the TO-220 through-hole package which is widely used for commercial and industrial app.

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Advanced Power Electronics Corp. AP03N40AP-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 400V 2.6Ω 2.7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP03N40AP-HF-3 is in the TO-220 through-hole package which is widely used for commercial and industrial applications. This device is well suited for use in high voltage applications such as AC/DC converters. D (tab) G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 400 ± 20 Units V V A A W W °C °C 2.7 10 44.6 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.8 62 Units °C/W °C/W Ordering Information AP03N40AP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50 pieces per tube) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 201010121-3 1/5 Advanced Power Electronics Corp. AP03N40AP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=1.3A VDS=VGS, ID=250uA VDS=10V, ID=1.3A VDS=320V, VGS=0V VGS=± 20V, VDS=0V ID=1A VDS=320V VGS=10V VDD=200V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 400 2 - Typ. 2 11 2.5 5 8 4.5 17 10 370 45 9 3.2 Max. Units 2.6 4 25 ± 100 17.5 600 6.4 V Ω V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.3A, VGS=0V IS=1A, VGS=0V, dI/dt=100A/µs Min. - Typ. 150 820 Max. Units 1.5 V ns nC Reverse Recovery Time2 Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. Typical Electrical Characteristics 6 3 AP03N40AP-HF-3 10V 8.0V 7.0V ID , Drain Current (A) 2 T C =25 C 5 o T C =150 o C ID , Drain Current (A) 10V 8.0V 7.0V 6.0V 4 6.0V 3 V G =5.0V 1 2 1 V G =5.0V 0 0 8 16 24 32 0 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.2 3 Fig 2. Typical Output Characteristics I D =1mA I D =1.3A V G =10V 1.1 Normalized BVDSS (V) Normalized RDS(ON) 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. 2 Normalized BVDSS vs. Junction Temperature 1.6 Fig 4. Normalized On-Resistance vs. Junction Temperature I D =250uA 1.6 1.2 1.2 T j = 150 o C 0.8 T j = 25 o C Normalized VGS(th) (V) IS (A) 0.8 0.4 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/5 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) 12 600 AP03N40AP-HF-3 f=1.0MHz 10 I D =1A V DS =320V 500 VGS , Gate to Source Voltage (V) 8 C (pF) 400 C iss 6 300 4 200 2 100 C oss C rss 1 5 9 13 17 21 25 29 0 0 4 8 12 16 0 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics 100 Fig 8. Typical Capacitance Characteristics 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 10 10us Operation in this area limited by RDS(ON) 0.2 ID (A) 0.1 0.1 0.05 100us 1 PDM 0.02 t T 1ms T c =25 C Single Pulse 0.1 1 10 100 0.01 o 10ms 100.


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