HAF2011S

HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st. Edition Jan. 1999 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 G 4 Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain HAF2011(L),HAF2011(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 60 16 –2.5 40 80 40 50 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate non shut down) Shut down temperature Gate operation...