AP13N50I-HF-3

Advanced Power Electronics Corp. AP13N50I-HF-3 N-channel Enhancement-mode Power MOSFET Low On-resistance Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 500V 0.52Ω 14A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP13N50I-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in high voltage applications such as off-line AC/DC converters. G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 500 ±30 14 9 50 39 0.31 2 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 98 14 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.2 65 Units °C/W °C/W Ordering Information AP13N50I-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube) ©2010 Advanced Power Electron...