N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP05N50EH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteris...
Description
AP05N50EH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
500V 1.6Ω 5A
S
Description
The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP05N50EJ) is available for low-profile applications.
G
GD
S
TO-252(H)
D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 500 +30 5 20 73.5
Units V V A A W W mJ A ℃ ℃
Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range
4 2
2 12.5 5 -55 to 150 -55 to 150
Single Pulse Avalanche Energy
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.7 62.5 110
Unit ℃/W ℃/W ℃/W 1 201008041
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP05N50EH/J-HF
Electrical Ch...
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