N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP3990P-3
N-channel Enhancement-mode Power MOSFET
100% Avalanche-Tested Simple Drive ...
Description
Advanced Power Electronics Corp.
AP3990P-3
N-channel Enhancement-mode Power MOSFET
100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant G S D
BV DSS R DS(ON) ID
600V 0.6Ω 10A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP3990P-3 is in the popular TO-220 through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited as the main switching device for universal 90~265VAC off-line AC/DC converters.
G
D
S
TO-220
(P)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 600 ±30 10 6.5 40 174 50 10 -55 to 150 -55 to 150
Units V V A A A W mJ A °C °C
Total Power Dissipation Single Pulse Avalanche Energy3 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.72 62 Units °C/W °C/W
Ordering Information
AP3990P-3TB RoHS-compliant TO-220, shipped in tubes
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200903053-3
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