N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP3990S-HF-3
N-channel Enhancement-mode Power MOSFET
100% Avalanche-Tested Simple Dri...
Description
Advanced Power Electronics Corp.
AP3990S-HF-3
N-channel Enhancement-mode Power MOSFET
100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
600V 0.6Ω 10A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP3990S-HF-3 is in the TO-263 surface-mount package which is widely used for commercial and industrial surface-mount applications. This device is well suited for use in high voltage applications such as off-line AC/DC converters.
D (tab)
G D S
TO-263 (S)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA =25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 600 ±30 10 6.5 40 174 3.13
3
Units V V A A A W W mJ A °C °C
Total Power Dissipation Total Power Dissipation 4 Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
50 10 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.72 40 Units °C/W °C/W
Ordering Information
AP3990S-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel)
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
201202...
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