BARRIER DIODE. YG831C03R Datasheet

YG831C03R Datasheet PDF, Equivalent


Part Number

YG831C03R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
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YG831C03R Datasheet
YG831C03R
SCHOTTKY BARRIER DIODE
(30V / 6A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
30 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=127°C
Square wave
Sine wave 10ms
30
1500
6*
90
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=2.0A
0.45 V
Reverse current **
IR VR=VRRM
5.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
5.0 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.0
N·m
g

YG831C03R Datasheet
(30V / 6A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
1
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
Forward Power Dissipation
3.0
2.8
2.6 Io
2.4
λ
2.2
360°
2.0
1.8
Square wave λ=60°
1.6 Square wave λ=120°
1.4 Sine wave λ=180°
Square wave λ=180°
1.2
DC
1.0
0.8
0.6
0.4
0.2 Per 1element
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
Io Average Forward Current (A)
160
155
150
145
140
135
130
125
120
115
110
105
100
0
Current Derating (Io-Tc)
360°
λ
Io
VR=20V
DC
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
Square wave λ=60°
123456789
IO Average Output Current (A)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG831C03R
Reverse Characteristic (typ.)
102 Tj=150°C
Tj=125°C
101 Tj=100°C
100
Tj=25°C
10-1
10-2
10-3
0
5 10 15 20 25 30 35
VR Reverse Voltage (V)
Reverse Power Dissipation
6.0
5.5 360°
5.0 VR
4.5
α
4.0
DC
3.5
3.0
2.5
2.0 α=180°C
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
1000
100
10
10
100
VR Reverse Voltage (V)


Features Datasheet pdf YG831C03R SCHOTTKY BARRIER DIODE (30V / 6A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min Fe atures Low VF Super high speed switchin g. High reliability by planer design. J EDEC EIAJ 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 SC-67 Applica tions High speed power switching. Conn ection Diagram 2 1 3 Maximum Ratings a nd Characteristics Absolute Maximum Rat ings Item Repetitive peak reverse volta ge Repetitive peak surge reverse voltag e Isolating voltage Average output curr ent Suege current Operating junction te mperature Storage temperature Symbol VR RM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=127°C Square wave Sine wa ve 10ms Conditions Rating 30 30 1500 6 * 90 +150 -40 to +150 Unit V V V A A C °C Electrical Characteristics (Ta= 25°C Unless otherwise specified ) Item Forward voltage drop ** Reverse curren t ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=2.0A VR=VRRM Junct.
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