BARRIER DIODE. YG881C02R Datasheet

YG881C02R Datasheet PDF, Equivalent


Part Number

YG881C02R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
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YG881C02R Datasheet
YG881C02R
SCHOTTKY BARRIER DIODE
(20V / 8A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
123
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
20 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=103°C
Square wave
Sine wave 10ms
20
1500
8*
80
V
V
A
A
Operating junction temperature
Tj
+125
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +125
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=2.0A
0.39 V
Reverse current **
IR VR=VRRM
10.0
mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
5.0 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG881C02R Datasheet
(20V / 8A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=125 oC
Tj=100 oC
Tj=25 oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF Forward Voltage (V)
Forward Power Dissipation
4.0
Io
3.5
λ
3.0 360°
2.5
Square wave λ=60o
Square wave λ=120o
2.0 Sine wave λ=180o
Square wave λ=180o
1.5 DC
1.0
0.5
0.0
0.0
Per 1element
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Io Average Forward Current (A)
4.0
4.5
Current Derating (Io-Tc)
140
135
130
125
120
115
110 DC
105
Square wave λ=180o
100 Sine wave λ=180o
95 360°
λ
Io
90
Square wave λ=120o
VR=10V
85
Square wave λ=60o
80
0 1 2 3 4 5 6 7 8 9 10 11 12
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG881C02R
Reverse Characteristic (typ.)
102
Tj=125 oC
Tj=100 oC
101
100
Tj= 25 oC
10-1
10-2
0
5
VR
10 15
Reverse Voltage (V)
20
25
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Reverse Power Dissipation
360°
VR
α
DC
α =180o
5
VR
10 15 20
Reverse Voltage (V)
25
Junction Capacitance Characteristic (typ.)
1000
100
10
1
10 100
VR Reverse Voltage (V)


Features Datasheet pdf YG881C02R SCHOTTKY BARRIER DIODE (20V / 8A TO-22OF15) Outline Drawings 10±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 1 2 3 3.7±0.2 1.2±0.2 13Min Features Low VF Super high spee d switching. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC- 67 Applications High speed power switc hing. Connection Diagram 2 1 3 Maximu m Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak re verse voltage Repetitive peak surge rev erse voltage Isolating voltage Average output current Suege current Operating junction temperature Storage temperatur e Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=103°C Square w ave Sine wave 10ms Conditions Rating 2 0 20 1500 8* 80 +125 -40 to +125 Unit V V V A A °C °C * Out put current of centertap full wave connection. Electr ical Characteristics (Ta=25°C Unless o therwise specified ) Item Forward voltage drop ** Reverse current ** Thermal r.
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