BARRIER DIODE. YG802C03R Datasheet

YG802C03R Datasheet PDF, Equivalent


Part Number

YG802C03R

Description

SCHOTTKY BARRIER DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG802C03R Datasheet PDF


YG802C03R Datasheet
YG802C03R
SCHOTTKY BARRIER DIODE
(30V / 10A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1 23
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
30 V
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=125°C
Square wave
Sine wave 10ms
30
1500
10*
120
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=4.0A
0.47 V
Reverse current **
IR VR=VRRM
5.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
3.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG802C03R Datasheet
(30V / 10A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
Tj=150oC
Tj=125oC
Tj=100oC
Tj=25oC
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF Forward Voltage (V)
Forward Power Dissipation
5.0
4.5 Io
4.0 λ
360°
3.5
3.0 Square wave λ=60o
Square wave λ=120o
2.5 Sine wave λ=180o
Square wave λ=180o
2.0
DC
1.5
1.0
0.5
Per 1element
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
155
150
145
140
135 DC
130
Sine wave λ=180o
125 Square wave λ=180o
120 Square wave λ=120o
115
110
360°
105 λ
Io
100
VR=20V
95
Square wave λ=60o
90
0 2 4 6 8 10 12
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
14
YG802C03R
Reverse Characteristic (typ.)
Tj=150oC
102
Tj=125oC
101
Tj=100oC
100
10-1
Tj=25oC
10-2
10-3
0
5 10 15 20 25 30
VR Reverse Voltage (V)
35
Reverse Power Dissipation
5.0
4.5 360°
DC
4.0 VR
3.5 α
3.0
2.5 α =180o
2.0
1.5
1.0
0.5
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
VR Reverse Voltage (V)
Junction Capacitance Characteristic (typ.)
1000
100
10
10
100
VR Reverse Voltage (V)


Features Datasheet pdf YG802C03R SCHOTTKY BARRIER DIODE (30V / 10A TO-22OF15) Outline Drawings 10±0. 5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6. 3 2.7±0.2 1 2 3 3.7±0.2 1.2±0. 2 13Min Features Low VF Super high spe ed switching. High reliability by plane r design. 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 JEDEC EIAJ SC -67 Applications High speed power swit ching. Connection Diagram 2 1 3 Maxim um Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak r everse voltage Repetitive peak surge re verse voltage Isolating voltage Average output current Suege current Operating junction temperature Storage temperatu re Symbol VRRM VRSM Viso IO IFSM Tj Tst g tw=500ns, duty=1/40 Terminals to Case , AC. 1min. duty=1/2, Tc=125°C Square wave Sine wave 10ms Conditions Rating 30 30 1500 10* 120 +150 -40 to +150 Un it V V V A A °C °C * Out put current of centertap full wave connection. Ele ctrical Characteristics (Ta=25°C Unles s otherwise specified ) Item Forward voltage drop ** Reverse current ** Therma.
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