AP04N70BP-H-HF-3

Advanced Power Electronics Corp. AP04N70BP-H-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 700V 2.4Ω 4A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP04N70BP-H-HF-3 is in the TO-220 through-hole package which is widely used for commercial and industrial applications. This device is well suited for use in high voltage applications such as off-line AC/DC converters. D (tab) G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 700 ±30 4 2.5 15 Units V V A A A W W/°C mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 3 62.5 0.5 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2 40 Units °C/W °C/W Ordering Information AP04N70BP-H-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50 pieces per tube) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 201012091-3 1/5 Advanced Power Electronics Corp. AP04N70...