N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4002T-HF-3
N-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics L...
Description
Advanced Power Electronics Corp.
AP4002T-HF-3
N-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics Low Gate Charge Simple Drive Requirement RoHS-compliant, halogen-free
D
BV DSS RDS(ON)
G S
600V 5Ω 400mA
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4002T-3 is in the popular TO-92 small through-hole package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in low current applications such as small switching power supplies and load switches.
G D S
TO-92
Absolute Maximum Ratings
Symbol VDS VGS ID at TL=25°C IDM PD at TL=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
2
Rating 600 ±30 400 3 2 0.017 20 2 -55 to 150 -55 to 150
Units V V mA A W W/ °C mJ A °C °C
Thermal Data
Symbol Rthj-a Rthj-l Parameter Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Unit °C/W °C/W
Ordering Information
AP4002T-HF-3AP : in RoHS-compliant halogen-free TO-92, shipped on Ammopak, 2000pcs/ reel
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200807312-3
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