N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002T-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics...
Description
AP4002T-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 5Ω 400mA
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications. TO-92 D S
G
Absolute Maximum Ratings
Symbol VDS VGS ID@TL=25℃ IDM PD@TL=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 +30 400 3 2 0.017
2
Units V V mA A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
20 2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-a Rthj-l Parameter Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Unit ℃/W ℃/W
Data & specifications subject to change without notice
1 200807312
AP4002T-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Sour...
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