N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP01N60H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement 100%...
Description
Advanced Power Electronics Corp.
AP01N60H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement 100% Avalanche Test Fast Switching Characteristics RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
600V 8Ω 1.6A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab) TO-252 (H)
The AP01N60H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP01N60J-HF-3) is available where a small PCB footprint is required.
G D S
D (tab) TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 600 ±30 1.6 1 6 39 0.31
2
Units V V A A A W W/°C mJ A mJ °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
13 1.6 0.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 3.2 62.5 110
Units °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP...
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