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AP03N70I-A-HF-3 Dataheets PDF



Part Number AP03N70I-A-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP03N70I-A-HF-3 DatasheetAP03N70I-A-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP03N70I-A-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 3.6Ω 3.3A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP03N70I-A-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and i.

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Advanced Power Electronics Corp. AP03N70I-A-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 3.6Ω 3.3A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP03N70I-A-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in high voltage applications such as off-line AC/DC converters. G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 650 ± 30 3.3 2.1 10 29 0.23 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Avalanche Current Storage Temperature Range Operating Junction Temperature Range Energy2 67 3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.3 65 Unit °C/W °C/W Ordering Information AP03N70I-A-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube) ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 201008252-3 1/5 Advanced Power Electronics Corp. AP03N70I-A-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BVDSS /∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 2 12 3 5 9 5 18 Max. Units 3.6 4 10 100 +100 20 V V/°C Ω V S uA uA nA nC nC nC ns ns ns Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance 3 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VGS=+30V, VDS=0V ID=3A VDS=480V VGS=10V VDD=300V ID=3A RG=10Ω , VGS=10V RD=100Ω VGS=0V VDS=25V f=1.0MHz Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 - 6 600 45 4 960 - ns pF pF pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 3 Test Conditions IS=3A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 422 2580 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by maximum junction temperature. o 2. Starting Tj=25 C , VDD=50V , L=15mH, RG=25Ω , IAS=3A. 3. Pulse test - pulse width < 300µs , duty cycle < 2% THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. Typical Electrical Characteristics 4 3 AP03N70I-A-HF-3 T C =25 C ID , Drain Current (A) 3 o 10V 6.0V 2 T C =150 C ID , Drain Current (A) o 10V 5.0V 2 4.5V 2 5.0V 1 1 4.0V 4.5V V G =4.0V 1 V G =3.5V 0 0 0 5 10 15 20 25 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 2.0 Normalized BVDSS (V) 1.1 Normalized RDS(ON) I D =1.6A V G =10V 1.6 1.0 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS vs. Junction Temperature 1.4 Fig 4. Normalized On-Resistance vs. Junction Temperature 100 1.2 10 IS (A) T j = 150 o C 1 T j = 25 o C Normalized VGS(th) (V) 1.3 1 0.8 0.1 0.6 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/5 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) 14 10000 AP03N70I-A-HF-3 f=1.0MHz 12 I D =3A V DS =480V VGS , Gate to Source Voltage (V) 10 C iss C (pF.


AP03N70I-H-HF-3 AP03N70I-A-HF-3 AP03N70I-A-HF


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