N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP09N90CW-HF-3
N-channel Enhancement-mode Power MOSFET
100% Avalanche-Tested Simple D...
Description
Advanced Power Electronics Corp.
AP09N90CW-HF-3
N-channel Enhancement-mode Power MOSFET
100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
900V 1.4Ω 7.6A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP09N90CW-HF-3 is in the TO-3P through-hole package which is widely used in higher power commercial and industrial applications where an attached heatsink is required. This device is well suited for use in high voltage applications such as off-line AC/DC converters.
tab (D)
G
D
S
TO-3P (W)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 900 ±30 7.6 4.8 25 208 120 6 -55 to 150 -55 to 150
Units V V A A A W mJ A °C °C
Total Power Dissipation Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.6 40 Units °C/W °C/W
Ordering Information
AP09N90CW-HF-3TB : in RoHS-compliant, halogen-free TO-3P, shipped in tubes
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200912163-3
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