N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP03N90P-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement 100% A...
Description
Advanced Power Electronics Corp.
AP03N90P-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement 100% Avalanche Tested Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
900V 5.2Ω 3A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP03N90P-HF-3 provides high blocking voltage to overcome voltage surge and sag in the toughest power systems and is well suited for universal 90~265VAC off-line AC/DC converter applications.
D (tab)
G
D
S
TO-220 (P)
The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required.
Absolute Maximum Ratings
Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 900 ±30 3 1.89 10 83.3 0.67
3
Units V V A A A W W/ °C mJ °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
4.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.5 62 Unit °C/W °C/W
Ordering Information
AP03N90P-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube)
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