N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP02N90P-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On...
Description
Advanced Power Electronics Corp.
AP02N90P-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
900V 7.2Ω 1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP02N90P-HF-3 provides high blocking voltage to overcome voltage surge and sag in the toughest power systems and is well suited for DC-DC, AC-DC converters for power applications.
D (tab)
G
D
S
TO-220 (P)
The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required.
Absolute Maximum Ratings
Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 900 ±30 1.9 1.2 6 62.5 0.5
2
Units V V A A A W W/ °C mJ A °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
18 1.9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2 62 Unit °C/W °C/W
Ordering Information
AP02N90P-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (5...
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