AP02N90I-HF-3

Advanced Power Electronics Corp. AP02N90I-HF-3 N-channel Enhancement-mode Power MOSFET Fully isolated package Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 900V 7.2Ω 1.9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP02N90I-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in high voltage applications such as off-line AC/DC converters. G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 900 ±30 1.9 1.2 6 34.7 36 1.9 -55 to 150 -55 to 150 Units V V A A A W mJ A °C °C Total Power Dissipation Single Pulse Avalanche Energy3 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 62 Units °C/W °C/W Ordering Information AP02N90I-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube) ©2010 Advanced Power Electronics Corp. USA www.a-poweru...