N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP02N90H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast...
Description
Advanced Power Electronics Corp.
AP02N90H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low On-resistance RoHS-compliant, Halogen-free G S D
BV DSS R DS(ON) ID
900V 7.2Ω 1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
TO-252 (H)
The AP02N90H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP02N90J-HF-3) is available where a small PCB footprint is required.
G D S
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
2
Rating 900 ± 30 1.9 1.2 6 62.5 0.5 18 1.9 -55 to 150 -55 to 150
Units V V A A A W W/°C mJ A ° C ° C
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 2 62.5 110
Unit ° C/W ° C/W ° C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP02N90H-HF-3TR : in RoHS-compliant halogen-free TO-25...
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