AP02N90J-HF-3

Advanced Power Electronics Corp. AP02N90H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low On-resistance RoHS-compliant, Halogen-free G S D BV DSS R DS(ON) ID 900V 7.2Ω 1.9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP02N90H-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP02N90J-HF-3) is available where a small PCB footprint is required. G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 2 Rating 900 ± 30 1.9 1.2 6 62.5 0.5 18 1.9 -55 to 150 -55 to 150 Units V V A A A W W/°C mJ A ° C ° C Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 2 62.5 110 Unit ° C/W ° C/W ° C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP02N90H-HF-3TR : in RoHS-compliant halogen-free TO-25...