N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2307GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Description
AP2307GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free
S SOT-23 G D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-16V 60mΩ - 4A
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -16 +8 -4 -3.3 -12 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 90
Unit ℃/W 1 201003154
Data and specifications subject to change without notice
AP2307GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-4A
Min. -16 -
Typ. 12 15 1.3 4 8 11 54 36 985 180 160
Max. Units 60 70 90 -1.0 -1 -25 +100 24 1580 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns...
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