Document
SMP20P10
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V)
–100 TO-220AB
rDS(on) (W)
0.20
ID (A)
–20
D
G
Drain Connected to Tab G D S Top View S N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) L = 0.05 mH TC = 25_C TC = 100_C TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg TL
Limit
–100 "20 –20 –12 –80 –20 20 125 50 –55 to 150 300
Unit
V
A
mJ W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink Notes: a. Duty cycle v1% Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70287.
Symbol
RthJA RthJC RthCS
Typical
Maximum
80 1.0
Unit
_C/W
1.0
Siliconix P-35259—Rev. B, 16-May-94
1
SMP20P10
Specifications (TJ = 25_C Unless Otherwise Noted)
Limit Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductance b V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –80 V, VGS = 0 V VDS = –80 V, VGS = 0 V, TJ = 125_C VDS = –10 V, VGS = –10 V VGS = –10 V, ID = –12 A VGS = –10 V, ID = –12 A, TJ = 125_C VDS = –15 V, ID = –12 A 4.8 –20 0.15 0.24 6.7 0.20 0.30 –100 –2.0 –4.0 "100 –250 –1000 nA mA A W S V
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = –40 V, RL = 2.1 W ID ] –19 A, VGEN = –10 V, RG = 4.7 W VDS = –50 V, VGS = –10 V, ID = –20 A VGS = 0 V, VDS = –25 V, f = 1 MHz 1300 700 250 47 10 27 10 50 25 15 60 18 36 30 80 80 60 ns nC pF
Gate-Drain Chargec Turn-On Delay Timec Rise Timec
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics
Continuous Current Pulsed Current Diode Forward Voltageb Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr IF = –20 A, VGS = 0 V IF = –20 20 A, A di/dt = 100 A/ms 150 0.3 –20 A –80 –1.7 V ns mC
Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature.
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Siliconix P-35259—Rev. B, 16-May-94
SMP20P10
Typical Characteristics (25_C Unless Otherwise Noted)
25
Output Characteristics
VGS = 10 V 9V
12.5
Transfer Characteristics
TC = –55_C 25_C 125_C
20 I D – Drain Current (A) I D – Drain Current (A) 10 8V 15 7V 10 6V 5 5V 4V 0 0 2 4 6 8
10.0
7.5
5.0
2.5
0 0 2 4 6 8 10
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
12.5
Transconductance
TC = –55_C
1.25
On-Resistance vs. Drain Current
10.0 g fs – Transconductance (S) 25_C 7.5 125_C rDS(on) – On-Resistance ( W )
1.00
0.75
5.0
0.50 VGS = 10 V 0.25 20 V 0
2.5
0 0 10 20 30 40 50
0
15
30
45
60
75
ID – Drain Current (A) 3000 VGS = 0 V VGS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 2000 Ciss 1500 Coss 1000 500 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Crss 12.5 10.0 7.5 5.0 2.5 0 0 15
ID – Drain Current (A) 15.0 ID = 20 A
Capacitance
Gate Charge
VDS = 50 V 80 V
30
45
60
75
Qg – Total Gate Charge (nC)
Siliconix P-35259—Rev. B, 16-May-94
3
SMP20P10
Typical Characteristics (25_C Unless Otherwise Noted)
1.75
On-Resistance vs. Junction Temperature
200 100
Source-Drain Diode Forward Voltage
rDS(on) – On-Resistance ( W ) (Normalized)
1.50 I S – Source Current (A) TJ = 150_C TJ = 25_C 10
1.25
1.00
0.75
0.50 –50
0 –10 30 70 110 150 0 1 2 3 4 5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)
Thermal Ratings
25
Maximum Avalanche and Drain Current vs. Case Temperature
200 100
Safe Operating Area
20 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on)
10 ms 100 ms
15
10
10
1 ms
5
TC = 25_C Single Pulse 1
10 ms 100 ms dc
0 0 25 50 75 100 125 150 TC – Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02
2
10
100
500
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec)
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Siliconix P-35259—Rev. B, 16-May-94
.