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SMP20P10 Dataheets PDF



Part Number SMP20P10
Manufacturers Siliconix
Logo Siliconix
Description P-Channel Enhancement-Mode Transistor
Datasheet SMP20P10 DatasheetSMP20P10 Datasheet (PDF)

SMP20P10 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –100 TO-220AB rDS(on) (W) 0.20 ID (A) –20 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” .

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SMP20P10 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –100 TO-220AB rDS(on) (W) 0.20 ID (A) –20 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) L = 0.05 mH TC = 25_C TC = 100_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg TL Limit –100 "20 –20 –12 –80 –20 20 125 50 –55 to 150 300 Unit V A mJ W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink Notes: a. Duty cycle v1% Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70287. Symbol RthJA RthJC RthCS Typical Maximum 80 1.0 Unit _C/W 1.0 Siliconix P-35259—Rev. B, 16-May-94 1 SMP20P10 Specifications (TJ = 25_C Unless Otherwise Noted) Limit Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductance b V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –80 V, VGS = 0 V VDS = –80 V, VGS = 0 V, TJ = 125_C VDS = –10 V, VGS = –10 V VGS = –10 V, ID = –12 A VGS = –10 V, ID = –12 A, TJ = 125_C VDS = –15 V, ID = –12 A 4.8 –20 0.15 0.24 6.7 0.20 0.30 –100 –2.0 –4.0 "100 –250 –1000 nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = –40 V, RL = 2.1 W ID ] –19 A, VGEN = –10 V, RG = 4.7 W VDS = –50 V, VGS = –10 V, ID = –20 A VGS = 0 V, VDS = –25 V, f = 1 MHz 1300 700 250 47 10 27 10 50 25 15 60 18 36 30 80 80 60 ns nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics Continuous Current Pulsed Current Diode Forward Voltageb Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr IF = –20 A, VGS = 0 V IF = –20 20 A, A di/dt = 100 A/ms 150 0.3 –20 A –80 –1.7 V ns mC Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2 Siliconix P-35259—Rev. B, 16-May-94 SMP20P10 Typical Characteristics (25_C Unless Otherwise Noted) 25 Output Characteristics VGS = 10 V 9V 12.5 Transfer Characteristics TC = –55_C 25_C 125_C 20 I D – Drain Current (A) I D – Drain Current (A) 10 8V 15 7V 10 6V 5 5V 4V 0 0 2 4 6 8 10.0 7.5 5.0 2.5 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 12.5 Transconductance TC = –55_C 1.25 On-Resistance vs. Drain Current 10.0 g fs – Transconductance (S) 25_C 7.5 125_C rDS(on) – On-Resistance ( W ) 1.00 0.75 5.0 0.50 VGS = 10 V 0.25 20 V 0 2.5 0 0 10 20 30 40 50 0 15 30 45 60 75 ID – Drain Current (A) 3000 VGS = 0 V VGS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 2000 Ciss 1500 Coss 1000 500 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Crss 12.5 10.0 7.5 5.0 2.5 0 0 15 ID – Drain Current (A) 15.0 ID = 20 A Capacitance Gate Charge VDS = 50 V 80 V 30 45 60 75 Qg – Total Gate Charge (nC) Siliconix P-35259—Rev. B, 16-May-94 3 SMP20P10 Typical Characteristics (25_C Unless Otherwise Noted) 1.75 On-Resistance vs. Junction Temperature 200 100 Source-Drain Diode Forward Voltage rDS(on) – On-Resistance ( W ) (Normalized) 1.50 I S – Source Current (A) TJ = 150_C TJ = 25_C 10 1.25 1.00 0.75 0.50 –50 0 –10 30 70 110 150 0 1 2 3 4 5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) Thermal Ratings 25 Maximum Avalanche and Drain Current vs. Case Temperature 200 100 Safe Operating Area 20 I D – Drain Current (A) I D – Drain Current (A) Limited by rDS(on) 10 ms 100 ms 15 10 10 1 ms 5 TC = 25_C Single Pulse 1 10 ms 100 ms dc 0 0 25 50 75 100 125 150 TC – Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 2 10 100 500 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) 4 Siliconix P-35259—Rev. B, 16-May-94 .


VS-STPS20L15GPbF SMP20P10 NL160120BC27-14


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