P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2603GY-HF-3
P-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics ...
Description
Advanced Power Electronics Corp.
AP2603GY-HF-3
P-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics Low Gate Charge Small Footprint, Low Profile RoHS-compliant, halogen-free
D
BV DSS R DS(ON) ID
-20V 65mΩ -5.0A
G S
Description
S
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D D G D D
The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.
SOT-26
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -20 ±12 -5 -4 -20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 62.5 Unit °C/W
Ordering Information
AP2603GY-HF-3TR RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel)
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200607283-3 1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA
AP2603GY-HF-3
Min. -20 -0.5 -
Typ. -0.01 9 10.6 2.32 3.68 5.9 3.6 32....
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