P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP1333GU-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Gate Drive Small Package...
Description
Advanced Power Electronics Corp.
AP1333GU-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Gate Drive Small Package Outline Low Gate Charge RoHS-compliant, halogen-free
D
BV DSS R DS(ON)
G S
-20V 800mΩ -550mA
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP1333GU-HF-3 is in the popular SOT-323 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in applications such as load switches.
D
S SOT-323 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -20 ±12
-0.55
Units V V A A A W °C °C
-0.44 -2.5 0.35 -55 to 150 -55 to 150
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 360
Unit °C/W
Ordering Information
AP1333GU-HF-3TR RoHS-compliant halogen-free SOT-323, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
200710223-3
1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage ...
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