AP20P02GH-3

Advanced Power Electronics Corp. AP20P02GH/J-3 P-channel Enhancement-mode Power MOSFET 2.5V Gate Drive Capability Simple Drive Requirement Fast Switching Characteristic RoHS-compliant D BV DSS RDS(ON) G S -20V 52mΩ -18A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP20P02GH-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP20P02GJ-3 is in the TO-251 through-hole package which is used where a small PCB footprint or an attached heatsink is required. G D S TO-252 (H) G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 +12 -18 -14 -50 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.0 110 Unit °C/W °C/W Ordering Information AP20P02GH-3TR AP20P02GJ-3TB RoHS-compliant TO-252, shipped on tape and reel (3000 pcs/reel) RoHS-compliant TO-251, shipped in tubes ©2009 A...