AP6679BGP-HF-3

Advanced Power Electronics Corp. AP6679BGP-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S -30V 9mΩ -63A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP6679BGP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well suited for low voltage G applications such as DC/DC converters. D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating -30 +20 -63 -40 -240 54.3 2 -55 to 150 -55 to 150 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.3 62 Units °C/W °C/W Ordering Information AP6679BGP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201007141-3 1/5 Advanced Power Electronics Corp. AP6679BGP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter...