AP4407GM-HF

AP4407GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching ▼ RoHS Compliant SO-8 S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S S -30V 14mΩ -10.7A D ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 +25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200809152 AP4407GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=-250uA 2 Min. Typ. Max. Units -30...