AP2605GY-HF

AP2605GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ RoHS Compliant SOT-26 D P-CHANNEL ENHANCEMENT MODE POWER MOSFET S D G D D BVDSS RDS(ON) ID -30V 80mΩ - 4A Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 +20 -4 -3.3 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200807082 AP2605GY-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.02 6 5.5 1 2.6 7 6 18 4 400 90 30 Max. Units 80 120 -3 -1 -25 +100 8.8 640 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference t...