Document
AP9567GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
ϰ Lower On-resistance ϰ Simple Drive Requirement ϰ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-40V 50mӨ -22A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9567GJ) is available for low-profile applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -40 ±25 -22 -14 -50 34.7 0.28 -55 to 150 -55 to 150
Units V V A A A W W/ к к к
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units к/W к/W
Data and specifications subject to change without notice
201229041
AP9567GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ӔBVDSS/ӔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. -40 -1 -
Typ. -0.03 12 11 3 6 10 43 24 45 880 140 110 5
Max. Units 50 70 -3 -1 -25 ±100 18 1400 8 V V/к mӨ mӨ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ө
Breakdown Voltage Temperature Coefficient Reference to 25к, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-15A VGS=-4.5V, ID=-8A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=-250uA VDS=-10V, ID=-15A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS= ±25V ID=-15A VDS=-32V VGS=-4.5V VDS=-20V ID=-15A RG=3.3Ө,VGS=-10V RD=1.3Ө VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-15A, VGS=0V IS=-15A, VGS=0V, dI/dt=-100A/µs
Min. -
Typ. 30 24
Max. Units -1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP9567GH/J
50 50
T C = 25 C
40
o
-10V -7.0V
40
T C = 150 o C -ID , Drain Current (A)
-10V -7.0V
-ID , Drain Current (A)
-5.0V
30
-4.5V
30
-5.0V -4.5V
20
20
V G = -3.0 V
10
10
V G = -3.0 V
0 0 2 4 6 8
0 0 2 4 6 8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.5
Normalized R DS(ON)
65
I D = -8 A T C =25 к
I D =-15A V G =-10V
1.2
RDS(ON) (mӨ )
55
0.9
45
35
0.6 2 4 6 8 10 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
10
8
Normalized -VGS(th) (V)
1.2
6
-IS(A)
T j =150 o C
4
T j =25 o C
0.8
2
0
0.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP9567GH/J
12
f=1.0MHz
10000
10
-VGS , Gate to Source Voltage (V)
V DS =-32V I D =-15A
8
C (pF)
6
1000
C iss
4
2
C oss C rss
0 0 5 10 15 20 25
100 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (Rthjc)
100us
Duty factor=0.5
0.2
1
1ms 10ms 100ms 1s DC T c =25 C Single Pulse
o
-ID (A)
0.1
0.1
0.05
PDM
0.02
t
0.01
0.1
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01 0.1 1 10 100 1000
0.01 0.00001 0.0001 0.001 0.01 0.1 1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V DS =-5V
30
VG QG
-ID , Drain Current (A)
T j =25 o C
20
T j =150 o C
-4.5V QGS QGD
10
Charge
0 0 2 4 6 8
Q
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
.