DatasheetsPDF.com

AP9567GH Dataheets PDF



Part Number AP9567GH
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP9567GH DatasheetAP9567GH Datasheet (PDF)

AP9567GH/J Pb Free Plating Product Advanced Power Electronics Corp. ϰ Lower On-resistance ϰ Simple Drive Requirement ϰ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 50mӨ -22A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9567GJ) is available for low-profile applications. G D S G D S.

  AP9567GH   AP9567GH



Document
AP9567GH/J Pb Free Plating Product Advanced Power Electronics Corp. ϰ Lower On-resistance ϰ Simple Drive Requirement ϰ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 50mӨ -22A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9567GJ) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 ±25 -22 -14 -50 34.7 0.28 -55 to 150 -55 to 150 Units V V A A A W W/ к к к Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units к/W к/W Data and specifications subject to change without notice 201229041 AP9567GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ӔBVDSS/ӔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -40 -1 - Typ. -0.03 12 11 3 6 10 43 24 45 880 140 110 5 Max. Units 50 70 -3 -1 -25 ±100 18 1400 8 V V/к mӨ mӨ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ө Breakdown Voltage Temperature Coefficient Reference to 25к, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-15A VGS=-4.5V, ID=-8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-15A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS= ±25V ID=-15A VDS=-32V VGS=-4.5V VDS=-20V ID=-15A RG=3.3Ө,VGS=-10V RD=1.3Ө VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-15A, VGS=0V IS=-15A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 30 24 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9567GH/J 50 50 T C = 25 C 40 o -10V -7.0V 40 T C = 150 o C -ID , Drain Current (A) -10V -7.0V -ID , Drain Current (A) -5.0V 30 -4.5V 30 -5.0V -4.5V 20 20 V G = -3.0 V 10 10 V G = -3.0 V 0 0 2 4 6 8 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.5 Normalized R DS(ON) 65 I D = -8 A T C =25 к I D =-15A V G =-10V 1.2 RDS(ON) (mӨ ) 55 0.9 45 35 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 8 Normalized -VGS(th) (V) 1.2 6 -IS(A) T j =150 o C 4 T j =25 o C 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9567GH/J 12 f=1.0MHz 10000 10 -VGS , Gate to Source Voltage (V) V DS =-32V I D =-15A 8 C (pF) 6 1000 C iss 4 2 C oss C rss 0 0 5 10 15 20 25 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) 100us Duty factor=0.5 0.2 1 1ms 10ms 100ms 1s DC T c =25 C Single Pulse o -ID (A) 0.1 0.1 0.05 PDM 0.02 t 0.01 0.1 T Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =-5V 30 VG QG -ID , Drain Current (A) T j =25 o C 20 T j =150 o C -4.5V QGS QGD 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform .


AP9567GJ-HF-3 AP9567GH AP9567GJ


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)