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AP2314GN-HF-3 Dataheets PDF



Part Number AP2314GN-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2314GN-HF-3 DatasheetAP2314GN-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP2314GN-HF-3 N-channel Enhancement-mode Power MOSFET Capable of 2.5V Gate Drive Low On-Resistance Surface Mount Device RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 20V 75mΩ 3.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2314GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial .

  AP2314GN-HF-3   AP2314GN-HF-3



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Advanced Power Electronics Corp. AP2314GN-HF-3 N-channel Enhancement-mode Power MOSFET Capable of 2.5V Gate Drive Low On-Resistance Surface Mount Device RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 20V 75mΩ 3.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2314GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 + 12 3.5 2.8 10 0.83 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit °C/W Ordering Information AP2314GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201006214-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 AP2314GN-HF-3 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.02 7 4 0.7 2 6 8 10 3 230 55 40 1.1 Max. Units 75 125 1.2 1 10 ±100 7 370 1.7 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BVDSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=20V, VGS=0V VGS=±12V, VDS=0V ID=3A VDS=16V VGS=4.5V VDS=15V ID=1A RG=3.3Ω ,VGS=5V RD=15Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.2A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 16 8 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300µs , duty cycle < 2% 2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 360°C/W when mounted on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE W.


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