Document
Advanced Power Electronics Corp.
AP2314GN-HF-3
N-channel Enhancement-mode Power MOSFET
Capable of 2.5V Gate Drive Low On-Resistance Surface Mount Device RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
20V 75mΩ 3.5A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2314GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches.
D
S SOT-23 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 20 + 12 3.5 2.8 10 0.83 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit °C/W
Ordering Information
AP2314GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201006214-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage
2
AP2314GN-HF-3
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.02 7 4 0.7 2 6 8 10 3 230 55 40 1.1
Max. Units 75 125 1.2 1 10 ±100 7 370 1.7 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
∆ BVDSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=20V, VGS=0V VGS=±12V, VDS=0V ID=3A VDS=16V VGS=4.5V VDS=15V ID=1A RG=3.3Ω ,VGS=5V RD=15Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz
Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=1.2A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 16 8
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300µs , duty cycle < 2%
2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 360°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE W.