Document
AP73T02GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
25V 9mΩ 57A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP73T02GJ) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 25 +20 57 40 160 50 -55 to 175 -55 to 175
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 3 62.5 110
Units ℃/W ℃/W ℃/W 1 201003022
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP73T02GH/J-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2 2
o
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=25V, VGS=0V VGS=+20V, VDS=0V ID=15A VDS=20V VGS=4.5V VDS=15V ID=30A RG=3.3Ω,VGS=10V RD=0.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Min. 25 1 -
Typ. 40 14 2.5 9.5 9 85 20.5 12.5 710 300 220 1.9
Max. Units 9 16 3 10 +100 22 1130 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 25 15
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP73T02GH/J-HF
160 100
T C =25 o C ID , Drain Current (A)
120
10V 7.0V 6.0V ID , Drain Current (A)
T C =175 C
80
o
10V 7.0V 6.0V 5.0V
5.0V
80
60
V G =4.0V
40
V G = 4.0V
40
20
0 0 2 4 6 8 10 12
0 0 2 4 6 8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I D =20A T C =25 o C Normalized RDS(ON) RDS(ON) (mΩ)
10 1.6
I D =30A V G =10V
8
1.2
6
0.8
4
2 4 6 8 10
0.4 -50 0 50 100 150 200
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
30
IS(A)
20
o T j =175 C
T j =25 o C
Normalized VGS(th) (V)
1.4
1.2
0.8
10
0.4
0 0 0.2 0.4 0.6 0.8 1 1.2
0.0 -50 0 50 100 150 200
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP73T02GH/J-HF
10 1000
f=1.0MHz
VGS , Gate to Source Voltage (V)
I D =15A
8 800
6
C (pF)
V DS =12V V DS =15V V DS =20V
C iss
600
4
400
C oss C rss
2 200
0 0 4 8 12 16 20 24
0 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
ID (A)
Operation in this area limited by RDS(ON)
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
0.2
0.1
100us
0.1
0.05
PDM
10
t
0.02
T C =25 o C Single Pulse
1 0.1 1 10
1ms 10ms 100ms DC
100
T
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe.