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AP73T02GH-HF Dataheets PDF



Part Number AP73T02GH-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP73T02GH-HF DatasheetAP73T02GH-HF Datasheet (PDF)

AP73T02GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 9mΩ 57A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-indu.

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AP73T02GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 9mΩ 57A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP73T02GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 25 +20 57 40 160 50 -55 to 175 -55 to 175 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3 62.5 110 Units ℃/W ℃/W ℃/W 1 201003022 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP73T02GH/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=25V, VGS=0V VGS=+20V, VDS=0V ID=15A VDS=20V VGS=4.5V VDS=15V ID=30A RG=3.3Ω,VGS=10V RD=0.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 25 1 - Typ. 40 14 2.5 9.5 9 85 20.5 12.5 710 300 220 1.9 Max. Units 9 16 3 10 +100 22 1130 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 25 15 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP73T02GH/J-HF 160 100 T C =25 o C ID , Drain Current (A) 120 10V 7.0V 6.0V ID , Drain Current (A) T C =175 C 80 o 10V 7.0V 6.0V 5.0V 5.0V 80 60 V G =4.0V 40 V G = 4.0V 40 20 0 0 2 4 6 8 10 12 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 12 2.0 I D =20A T C =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 10 1.6 I D =30A V G =10V 8 1.2 6 0.8 4 2 4 6 8 10 0.4 -50 0 50 100 150 200 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 IS(A) 20 o T j =175 C T j =25 o C Normalized VGS(th) (V) 1.4 1.2 0.8 10 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 200 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP73T02GH/J-HF 10 1000 f=1.0MHz VGS , Gate to Source Voltage (V) I D =15A 8 800 6 C (pF) V DS =12V V DS =15V V DS =20V C iss 600 4 400 C oss C rss 2 200 0 0 4 8 12 16 20 24 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 ID (A) Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) Duty factor = 0.5 0.2 0.1 100us 0.1 0.05 PDM 10 t 0.02 T C =25 o C Single Pulse 1 0.1 1 10 1ms 10ms 100ms DC 100 T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe.


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