N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2R403AGMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ SO-8 Compatible with ...
Description
AP2R403AGMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 2.4mΩ 150A
D
S
D D D
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on□ resistance and cost-effectiveness. The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
®
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip), V GS @ 10V Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating 30 +12 150 36.8 29.5 280 83.3 5
4
Units V V A A A A W W mJ ℃ ℃
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
28.8 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
3
Value 1.5 25
Units ℃/W ℃/W
Data & specifications subject to change without notice
1 201108081
AP2R403AGMT-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS R...
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