AP2R803AGMT-HF

AP2R803AGMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 3mΩ 105A D S D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. S S S G PMPAK® 5x6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip), V GS @ 10V Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +12 105 33 26.5 240 50 5 4 Units V V A A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 45 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 2.5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201103021 AP2R803AGMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Par...