N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP92T03GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼...
Description
AP92T03GS/P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4mΩ 80A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GP) are available for low-profile applications. G D S
TO-263(S)
G
D
TO-220(P)
S Units V V A A A W W/℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3
Rating 30 +20 80 50 320 89 0.71 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.4 40 62
Units ℃/W ℃/W ℃/W 1 201303053
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP92T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified...
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