N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP0603GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement
D D D ...
Description
AP0603GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
30V 6mΩ 16.3A
▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
SO-8
S S S
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 16.3 13 60 2.5 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W 1 201205102
Data and specifications subject to change without notice
AP0603GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=15A VGS=4.5V, ID=12A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage...
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