AP72T03GJ

AP72T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 9mΩ 62A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 + 20 62 44 190 60 0.4 3 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Rthj-a . Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 2.5 62.5 110 Units ℃/W ℃/W ℃/W 1 200902263 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP72T03GH/J Electrical Ch...