N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP62T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fa...
Description
AP62T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 12mΩ 54A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D
□
G
D
S
TO-252(H)
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 +20 54 38 120 47 0.31 20 20 -55 to 175 -55 to 175
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 3.2 62.5 110
Units ℃/W ℃/W ℃/W 1 200903124
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP62T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-...
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