Power Transistor. D689 Datasheet

D689 Datasheet PDF, Equivalent


Part Number

D689

Description

Silicon NPN Darlington Power Transistor

Manufacture

INCHANGE

Total Page 2 Pages
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D689 Datasheet
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD689
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·Complement to Type 2SB679
APPLICATIONS
·Low frequency medium power amplifier and medium speed
switching applications.
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
1.5 A
10 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1

D689 Datasheet
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD689
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= 1A ,IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A ,IB= 2mA
ICBO Collector Cutoff Current
VCB= 100V, IE= 0
IEBO Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
Switching Times
VEB= 10V; IC= 0
IC= 0.1A ; VCE= 2V
IC= 1A ; VCE= 2V
ton Turn-On Time
ts Storage Time
tf Fall Time
IB1= -IB2= 2mA; VCC= 30V
RL= 30Ω;PW=20μs;
Duty Cycle1%
MIN TYP. MAX UNIT
100 V
10 V
1.5 V
2.5 V
10 μA
10 μA
2000
1000
0.3 μs
2.0 μs
0.7 μs
isc websitewww.iscsemi.cn
2


Features Datasheet pdf INCHANGE Semiconductor isc Product Spec ification isc Silicon NPN Darlington P ower Transistor DESCRIPTION ·High DC C urrent Gain: hFE = 1000(Min)@ IC= 1A · Collector-Emitter Sustaining Voltage: V CEO(SUS) = 100V(Min) ·Low Collector-Em itter Saturation Voltage: VCE(sat) = 1. 5V(Max)@ IC= 1A ·Complement to Type 2S B679 2SD689 APPLICATIONS ·Low freque ncy medium power amplifier and medium s peed switching applications. ·Pulse mo tor driver, relay drive and hammer driv e applications. ABSOLUTE MAXIMUM RATIN GS (Ta=25℃) SYMBOL PARAMETER VALUE UN IT VCBO VCEO VEBO IC PC Tj Tstg Colle ctor-Base Voltage 100 V Collector-Em itter Voltage 100 V Emitter-Base Vol tage 10 V Collector Current-Continuo us Collector Power Dissipation TC=25℃ Junction Temperature 1.5 A 10 W 1 50 ℃ Storage Temperature Range -55 ~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Produc t Specification isc Silicon NPN Darlin gton Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif.
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